The gain and carrier density in semiconductor lasers under steady-state and transient conditions - Quantum Electronics, IEEE Journal of

نویسنده

  • Bin Zhao
چکیده

The carrier distribution functions in a semiconductor crystal in the presence of a strong optical field are obtained. These are used to derive expressions for the gain dependence on the carrier density and on the optical intensitythe gain suppression effect. A general expression for high order nonlinear gain coefficients is obtained. This formalism is then used to describe the carrier and power dynamics in semiconductor lasers above and below threshold in the static and transient regimes.

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تاریخ انتشار 2004